Method of forming vias in silicon carbide and resulting devices and circuits

ABSTRACT

A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device including a Group III-V semiconductor layer on a surface on a silicon carbide substrate, wherein the semiconductor device defines at least one via through the silicon carbide substrate and the epitaxial layer.

This application is a continuation of Ser. No. 11/551,286, filed Oct.20, 2006, which is a continuation-in-part of Ser. No. 11/067,543, filedFeb. 25, 2005, now U.S. Pat. No. 7,125,786, which is acontinuation-in-part of Ser. No. 10/249,448, filed Apr. 10, 2003, nowU.S. Pat. No. 6,946,739, which is a continuation of Ser. No. 10/007,431,filed Nov. 8, 2001, now U.S. Pat. No. 6,649,497, which is a continuationof Ser. No. 09/546,821, filed Apr. 11, 2000, now U.S. Pat. No.6,475,889, all of which are hereby incorporated herein by reference intheir entireties.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT

This invention was developed under DARPA Contract No. F33615-96-C-1967.The government may have certain rights in this invention.

BACKGROUND

The present invention relates to integrated circuits formed insemiconductor materials and in particular relates to methods for formingvia openings in semiconductor substrates, Group III nitride epitaxiallayers, and the resulting structures. More particularly, the inventionrelates to the use of such vias to form monolithic microwave integratedcircuits (MMICs) in silicon carbide (SiC).

The present invention relates to the manufacture of via openings(“vias”) in integrated circuits (ICs), and in particular relates to amethod of forming such vias in devices on a silicon carbide substrate inorder to take advantage of silicon carbide's electronic, thermal, andmechanical properties in the manufacture and use of monolithic microwaveintegrated circuits.

MMICs

In its most basic sense, a monolithic microwave integrated circuit is anintegrated circuit; i.e., a circuit formed of a plurality of devices; inwhich all of the circuit components are manufactured on top of a singlesemiconductor substrate, and which is designed to operate a microwavefrequencies. As is generally the case with integrated circuits, theadvantage of placing the device and circuit components on a singlesubstrate is one of saving space. Smaller circuit size offers numerousadvantages for electronic circuits and the end-use devices thatincorporate such circuits. In general, the end-use devices can besmaller while offering a given set of functions, or more circuits andfunctions can be added to devices of particular sizes, or bothadvantages can be combined as desired. From an electronic standpoint,integrated circuits help reduce or eliminate problems such as parasiticcapacitance loss that can arise when discrete devices are wire-bonded toone another to form circuits. These advantages can help integratedcircuits operate at improved bandwidths as compared to circuits that are“wired” together from discrete components.

Wireless communications systems represent one area of recent and rapidgrowth in integrated circuits and related commercial technology. Suchsystems are exemplified, although not limited to, cellular radiocommunication systems. One estimate predicts that the number of wirelesssubscribers for such phones will continue to grow worldwide and willexceed 450 million users in the immediate future. The growth of suchtechnologies will require that devices are smaller, more powerful andeasier to manufacture. These desired advantages apply to base, relay andswitching stations as well as to end user devices such as the cellularphones themselves.

As recognized by those of ordinary skill in this art, many wirelessdevices, and in particular cellular phone systems, operate in themicrowave frequencies of the electromagnetic spectrum. Although the term“microwave” is somewhat arbitrary, and the boundaries between variousclassifications or frequencies are likewise arbitrary, an exemplarychoice for the microwave frequencies would include wavelengths ofbetween about 3,000 and 300,000 microns (μ), which corresponds tofrequencies of between about 1 and 100 gigahertz (GHz).

As further known by those of ordinary skill in this art, theseparticular frequencies are most conveniently produced or supported bycertain semiconductor materials. For example, although discrete (i.e.,individual) silicon (Si) based devices can operate at microwavefrequencies, silicon-based integrated circuits suffer from lowerelectron mobility and are generally disfavored for frequencies aboveabout 3-4 GHz. Silicon's inherent conductivity also limits the gain thatcan be delivered at high frequencies.

Accordingly, devices that operate successfully on a commercial basis inthe microwave frequencies are preferably formed of other materials, ofwhich gallium arsenide (GaAs) is presently a material of choice. Galliumarsenide offers certain advantages for microwave circuits and monolithicmicrowave integrated circuits, including a higher electron mobility thansilicon and a greater insulating quality.

Because of the frequency requirements for microwave devices andmicrowave communications, silicon carbide is a favorable candidatematerial for such devices and circuits. Silicon carbide offers a numberof advantages for all types of electronic devices, and offers particularadvantages for microwave frequency devices and monolithic microwaveintegrated circuits. Silicon carbide has an extremely wide band gap(e.g., 2.996 electron volts (eV) for alpha SiC at 300K as compared to1.12 eV for Si and 1.42 for GaAs), has a high electron mobility, isphysically very hard, and has outstanding thermal stability,particularly as compared to other semiconductor materials. For example,silicon has a melting point of 1415° C. (GaAs is 1238° C.), whilesilicon carbide typically will not begin to disassociate in significantamounts until temperatures reach at least about 2000° C. As anotherfactor, silicon carbide can be fashioned either as a semiconductingmaterial or a semi-insulating material. Because insulating orsemi-insulating substrates are often required for MMICs, this is aparticularly advantageous aspect of silicon carbide.

Advances in semiconductor electronics have increased the availability ofwide-band gap materials, such as silicon carbide (SiC) and the Group IIInitrides (e.g. GaN, AlGaN and InGaN). The potential for producingtransistors operating at high frequencies, including the microwave band,has therefore become a commercial reality. Such higher frequency devicesare extremely useful in a number of applications, some of the morefamiliar of which are power amplifiers, wireless transceivers such ascellular telephones, and similar devices. See generally, commonlyassigned U.S. Pat. No. 6,507,046.

The wide bandgap characteristics of silicon carbide and the Group IIInitrides enable device manufacturers to optimize the performance ofsemiconductor electronics at frequencies that traditional materials cannot withstand. The high frequency capabilities of these wide bandgapmaterials present opportunities for development of high frequency, highpower semiconductor electronic devices on a scale that will meet theneeds of a growing industry.

Wide band gap epitaxial layers of significant interest include the GroupIII nitrides that are capable of withstanding operation at microwavefrequencies. Wu and Zhang explain the operation of these wide bandgapepitaxial layers in international patent application WO 01/57929,assigned to Cree Lighting Company, a wholly owned subsidiary of theassignee herein. Of particular importance to Wu and Zhang are highelectron mobility field effect transistors, known as HEMTs. HEMTs, asshown in WO 01/57929, comprise an upper epitaxial layer of semiconductormaterial on an insulating layer. Source, drain and gate contacts arefabricated on the upper epitaxial layer. The HEMT takes advantage of thephysical phenomenon that occurs when two chosen materials of differentband gaps are placed in contact with one another in an electronicdevice. The upper epitaxial layer in an HEMT typically has a widerbandgap than the insulating layer underneath it, and a two dimensionalelectron gas (2DEG) forms at the junction between the upper epitaxiallayer and the insulating layer. The 2DEG formed at this junction has ahigh concentration of electrons which provide an increased devicetransconductance. The 2DEG serves as the channel of an HEMT. Thischannel is open and closed depending on the bias of the signal appliedto the gate electrode. See WO 01/57929.

HEMTs are useful in applications that require high power output from ahigh frequency input signal. HEMT devices can generate large amounts ofpower because they have high breakdown fields, wide bandgaps (3.36 eVfor GaN at room temperature), large conduction band offset, and highsaturated electron drift velocity. The same size GaN amplifier canproduce up to ten times the power of a GaAs amplifier operating at thesame frequency. See WO 01/57929.

The 2DEG of a high electron mobility transistor is essentially anelectron rich upper portion of the undoped, smaller bandgap materialunder the wider bandgap epitaxial layer. The 2DEG can contain a veryhigh sheet electron concentration on the order of 10¹² to 10¹³carriers/cm². See commonly assigned U.S. Pat. No. 6,316,793. Electronsfrom the wider-bandgap semiconductor transfer to the 2DEG, allowing ahigh electron mobility in this region. Id. A major portion of theelectrons in the 2DEG is attributed to pseudomorphic strain in theAlGaN; see, e.g., P. M. Asbeck et al., Electronics Letters, Vol. 33, No.14, pp. 1230-1231 (1997); and E. T. Yu et al., Applied Physics Letters,Vol. 7 1, No. 19, pp. 2794-2796 (1997).

High power semiconducting devices, such as the above described HEMT,operate in a microwave frequency range and are used for RF communicationnetworks and radar applications. The devices offer the potential togreatly reduce the complexity and thus the cost of cellular phone basestation transmitters. Other potential applications for high powermicrowave semiconductor devices include replacing the relatively costlytubes and transformers in conventional microwave ovens, increasing thelifetime of satellite transmitters, and improving the efficiency ofpersonal communication system base station transmitters. See commonlyassigned U.S. Pat. No. 6,316,793.

Accordingly, the need exists for continued improvement in highfrequency, high power semiconductor based microwave devices. Onesignificant improvement described in detail herein is the development ofa means for fabricating HEMT devices as part of a monolithic microwaveintegrated circuit (MMIC).

MMICs are fabricated with backside metallic ground planes, to whichcontacts must be made from various points in the MMIC, for example attransmission line terminations. Traditionally, this has beenaccomplished by wire bonds. Although wire bonding techniques can be usedfor other devices that operate at other frequencies, they aredisadvantageous at microwave frequencies in silicon carbide devices. Inparticular, wires tend to cause undesired inductance at the microwavefrequencies at which silicon carbide devices are capable of operating.For frequencies above 10 GHz, wire bonding simply must be avoidedaltogether. Accordingly, such wire bonding is desirably—and sometimesnecessarily—avoided in silicon carbide-based MMICs.

The use of conductive vias (i.e., via openings filled or coated withmetal) to replace wire bonds is a potential solution to this problem. Todate, however, opening vias in silicon carbide has been rather difficultbecause of its extremely robust physical characteristics, which, asnoted above, are generally advantageous for most other purposes. MMICsthat incorporate HEMTs and other semiconductor devices require theadditional step of opening vias through the Group III nitride epitaxiallayers on the silicon carbide substrate without disrupting deviceintegrity. The invention described herein achieves the opening ofconductive vias through the silicon carbide substrate and through theGroup III nitride epilayers by utilizing etching techniques tailored tothe chemical composition of the substrate and the epilayers.

Etching and Etchants

Etching is a process that removes material (e.g., a thin film on asubstrate or the substrate itself) by chemical or physical reaction orboth. There are two main categories of etching: wet and dry. In wetetching, chemical solutions are used to etch, dry etching uses a plasma.Silicon carbide does not lend itself rapidly to wet etching because ofSiC's stability and high bond strength. Consequently, dry etching ismost often used to etch silicon carbide.

In dry etching, a plasma discharge is created by transferring energy(typically electromagnetic radiation in the RF or microwave frequencies)into a low-pressure gas. The gas is selected so that its plasma-stateetches the substrate material. Various fluorine-containing compounds(e.g., CF₄, SF₆, C₄F₈) are typically used to etch silicon carbide anddifferent plasma reactor systems may also use gas additives such asoxygen (O₂), hydrogen (H₂), or argon (Ar). The plasma contains gasmolecules and their dissociated fragments: electrons, ions, and neutralradicals. The neutral radicals play a part in etching by chemicallyreacting with the material to be removed while the positive ionstraveling towards a negatively charged substrate assist the etching byphysical bombardment.

Reactive ion etching (ME) systems typically use one RF generator. The RFpower is fed into one electrode (the “chuck,” on which the wafers areplaced), and a discharge results between this electrode and the groundedelectrode. In such systems, the capacitive nature of RF energy couplinglimits the density of the plasma, which in turn leads to lower etchrates of silicon carbide. In RIE systems, plasma density and ion energyare coupled and cannot be independently controlled. When RF input powerincreases, plasma density and ion energy both increase. As a result, MEsystems cannot produce the type of high density and low energy plasmafavorable for etching vias in silicon carbide.

In inductively coupled plasma (ICP) systems, two RF generators are used.One feeds RF power to a coil wrapped around the non-conductive dischargechamber. The second feeds power to the electrode (chuck) on which thewafers are placed. In such systems, the inductive nature of the RFenergy coupling increases the efficiency of energy coupling and hencethe density of the plasma. Additionally, the plasma density can beindependently controlled by the coil RF power, while the ion energy canbe independently controlled by the chuck RF power. Thus, ICP systems canproduce the high density and low energy plasmas that are favorable foretching vias in silicon carbide.

Etches are performed on selected areas of the wafer by masking areas ofthe wafer that do not need to be etched. The ratio of the etch rate ofthe substrate (the material to be etched) to the etch rate of the maskmaterial is referred to as the “selectivity” of the etch. For deepetches and faithful pattern transfer, high selectivity etches aredesired.

Etches generally proceed in both the vertical and horizontal directions.The vertical direction can be measured as etch depth in the unmaskedareas, while the horizontal direction can be measured as undercut underthe mask areas. The degree of anisotropy is expressed by how much theratio of the horizontal etch rate to the vertical etch rate deviatesfrom unity. When the etch rate in the vertical direction is much greaterthan the rate in the horizontal direction, the etch is calledanisotropic. The reverse characteristic is referred to as beingisotropic. Because of silicon carbide's high bond strength, it does notetch without ion bombardment in the horizontal direction. As a result,dry etches of silicon carbide are generally anisotropic.

In contrast, etches of silicon (Si) in ICP systems are generallyisotropic. This results from silicon's low bond strength, because ofwhich it readily etches in the horizontal direction. Silicon etches canbe made anisotropic by using the Bosch process that alternates adeposition step for sidewall protection and an etch step.

The use of ICP (inductively coupled plasma) and ECR (electron cyclotronresonance) sources for SiC etching have resulted in higher etch rates ascompared to RIE (reactive ion etch). Both ICP and ECR systems use loweroperating pressure (e.g., 1 to 20 milliTorr), higher plasma density(10¹¹ to 10¹² cm⁻³) and lower ion energies compared to RIE systems. Thecombination of these parameters result in high etch rate of SiC andminimal erosion of the etch mask. RIE systems use higher pressure (10 to300 milliTorr) lower plasma density (10¹⁰ cm⁻³) and higher ion energiesto break SiC bonds and etch; however, the detrimental effects of highion energies and low plasma density include mask erosion and lower etchrate.

As reported in the scientific literature by McDaniel et al., Comparisonof Dry Etch Chemistries for SiC, J. Vac. Sci. Technol. A., 15(3), 885(1997), scientists have been successful in etching SiC using an electroncyclotron resonance (ECR) plasma. Scientific studies have determinedthat higher ion density ECR discharges of CF₄/0₂ or SF₆/0₂ results in amuch higher etch rate than RIE. In contrast with RIE, there have been noobserved benefits to adding oxygen to either NF₃ or SF₆ during ECRetching.

Previous attempts at using plasma chemistries for high-density plasmaetching of SiC include the use of chlorine (Cl₂), bromine (Br₂), oriodine (I₂)-based gases. However, the use of fluorine-based gas hasproduced much higher etch rates. For example, Hong et al., PlasmaChemistries for High Density Plasma Etching of SiC, J. ElectronicMaterials, Vol. 28, No. 3, 196 (1999), discusses dry etching of 6H—SiCusing a variety of plasma chemistries which include sulfur hexafluoride(SF₆), chlorine (Cl₂), iodine chloride (ICl), and iodine bromide (IBr)in high ion density plasma tools (i.e., ECR and ICP). These efforts haveachieved etch rates of around 0.45 μm/minute (4500 Å/minute) with SF₆plasmas. Alternatively, Cl₂, ICl, and IBr-based chemistries in ECR andICP sources resulted in lower rates of 0.08 μm/minute (800 Å/minute). Itwas found that fluorine-based plasma chemistries produced the mostrapid, and hence most desirable, etch rates for SiC under high-densityplasma conditions. Unfortunately, the fluorine-based chemistriesdisplayed a poor selectivity for SiC with respect to photoresist masks.

Wang et al. reported in Inductively Coupled Plasma Etching of Bulk6H-SiC and Thin-film SiCN in NF3 Chemistries, J. Vac. Sci. Technol. A,16(4) (1998), the etching characteristics of 6H p+ and n+ SiC andthin-film SiC_(0.5)N_(0.5) in inductively coupled plasma NF₃/O₂ andNF₃/Ar discharges wherein etch rates of 0.35 μ/minute (3,500 Å/minute)were achieved.

In further scientific literature, Cao et al., Etching of SiC UsingInductively Coupled Plasma, J. Electrochem. Soc., Vol. 145, No. 10(1998), discusses plasma etching in an ECR plasma using CF₄ and O₂ gasat flow rates of 20 standard cubic centimeters per minute (sccm) and 9sccm, respectively, attained an etch rate in SiC of about 0.05 μm/minute(500 Å/minute). The process resulted in a 14 μm deep trench having asmooth bottom surface. Further, the low chamber pressure (i.e., 7 mTorr)minimized micromasking effects during the deep etch trenching. Duringthe Cao et al. investigation, substrate bias was maintained at 10 V andthe coil power was maintained at 700 W.

In view of the technologies discussed above, a primary objective of SiCvia etching is finding a process in which SiC is etched at a reasonablerate while erosion of the etch mask is kept to a minimum. The factorsaffecting this objective are the choice of mask material, plasmachemistry, plasma density, and ion energy. A secondary objective whenetching vias in SiC is obtaining smooth etch surfaces.

Therefore there is a need for a process in which SiC may be etched at areasonably rapid rate while erosion of the etch mask is minimized.

There is also a need for a method for etching a via in SiC of sufficientdepth and at a reasonable rate which results in a smooth surface at thebottom of the via trench.

Another need is for an etching method that efficiently etches Group IIInitride epilayers without etching the contacts on a semiconductor deviceor any exposed silicon carbide.

A further need exists for a technique that successfully incorporates theuse of appropriate vias in semi-conducting silicon carbide substrates tofacilitate the manufacture of silicon carbide based MIMICS and theend-use devices that can be formed with the silicon carbide-based MMICS.

OBJECT AND SUMMARY OF THE INVENTION

Therefore, it is an object of the present invention to provide a methodof etching vias in and entirely through silicon carbide substrates andGroup III nitride epitaxial layers, in a manner that favorablydifferentiates between the silicon carbide, the Group III nitrides, themasking material, and the contacts of a semiconductor device.

The invention meets this object with a method of etching a via through asemiconductor device formed in epitaxial layers on a silicon carbidesubstrate that has first and second surfaces on opposite sides of thesubstrate. The epitaxial layers comprise Group III nitride semiconductormaterial on the second surface of the silicon carbide substrate withrespective platinum contacts defining the source, gate, and drainregions of the device therein. The invention comprises a method ofetching a via through the silicon carbide substrate with a first etchantthat removes the silicon carbide but stops etching at the epitaxiallayer on the substrate. A second etchant then removes the epitaxiallayers and stops etching upon reaching the platinum contacts therein.The etching steps follow a masking pattern that results in a viaextending from the bottom, first surface of the silicon carbidesubstrate to a respective source, drain, or gate contact. Metallizingthe respective vias results in a conductive pathway through thesubstrate and epitaxial layers to the contacts and eliminates the needfor connecting the contacts to external circuitry by wire bonding.

In another aspect, the invention comprises a circuit precursorcomprising a silicon carbide substrate having respective first andsecond surfaces, at least one Group III nitride epitaxial layer in whicha semiconductor device is formed, and a via extending entirely throughthe silicon carbide substrate and stopping at the epitaxial layers.Another precursor has at least one via that extends from the firstsurface of the substrate all the way through the substrate, theepitaxial layers, and stopping at the source, gate, and drain contacts.

These and other objects and advantages of the invention, and the mannerin which the same are accomplished, will be more fully understood whentaken in conjunction with the detailed description and drawings inwhich:

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 through 13 are cross-sectional diagrams illustrating the methodof forming a via through a silicon carbide substrate to a device inaccordance with the present invention; and

FIG. 14 is a scanning electron micrograph (SEM) of a via formed in asilicon carbide substrate according to the present invention.

FIGS. 15-17 are cross sectional diagrams illustrating the method offorming the via through a silicon carbide substrate to a device by usingthe lift-off method to remove the indium-tin-oxide layer.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In a first aspect, the invention is a method of forming vias inparticular materials—preferably, silicon carbide and Group IIInitrides—that enables integrated circuits, and particularly monolithicmicrowave integrated circuits, to be formed on silicon carbidesubstrates with epitaxial layers on the substrate. The invention allowsthe devices to be connected to external circuitry in a manner thatreduces the inductance problems that are characteristic of such MIMICSwhen wire bonding is used to form electrical contacts for high frequencydevices and circuits.

FIGS. 1 through 11 illustrate in sequential fashion the basic steps ofthe method aspects of the present invention. These will be describedsomewhat generally, following which particular experimental details willbe set forth. Because much of the background of MMICs and their functionis well understood in this art, these will not be described inparticular detail other than as necessary to highlight the invention. Inthe same manner, certain process steps are generally well understood sothat where appropriate, these will be simply named rather than describedin detail. The novel and non-obvious features of the invention, however,are set forth herein in sufficient detail to provide those referring tothe specification with the ability to carry out the inventionsuccessfully and without undue experimentation.

FIG. 1 is a cross sectional view of a silicon carbide substrate 20 witha semiconductor device fabricated thereon as indicated by the brackets21. The device portion includes at least one epitaxial layer 29 on thesecond surface 28 of the silicon carbide substrate. Although FIG. 1shows one epitaxial layer 29, the invention described herein appliesequally to devices formed in a plurality of epitaxial layers on asilicon carbide substrate. As stated above, the purpose of the presentinvention is to form a via through the SiC substrate 20 and theepitaxial layer 29, and to use the via to provide an electrical paththrough the substrate 20 and to a contact 25. For descriptive purposes,FIGS. 1 through 11 illustrate a single via to one contact of a singledevice. It will nevertheless be understood that the method of theinvention, and the resulting structure, are more typically applied toforming numerous vias to numerous devices that form a circuit. Inparticular, the method is particularly adept for forming conductive viasto the source 22, gate 23, and drain 24 regions of transistors formed insilicon carbide. Certain of the method steps of the invention are,however, most clearly set forth by simplifying the illustrations.

Accordingly, FIG. 1 is meant to illustrate in broad fashion a siliconcarbide substrate 20 with a semiconductor device fabricated thereon asindicated by the brackets 21. Representative semiconductor devicesinclude metal-semiconductor field-effect transistors (MESFETs) or highelectron mobility transistors (HEMTs) with appropriate source 22, gate23, and drain 24 regions. In preferred embodiments, particularly formicrowave frequency devices, the source 22, gate 23, and drain 24regions are all formed in a wide band gap material such as siliconcarbide, or certain of the Group III nitrides such as aluminum nitride(AlN), gallium nitride (GaN), and related binary, ternary, and tertiaryGroup III nitride compounds such as AlGaN and InAlGaN. The invention,therefore, encompasses devices that include a plurality of wide band-gapepitaxial layers on a silicon carbide substrate.

The device 21 is formed on a silicon carbide substrate 20 that has afirst surface 27 and a second surfaces 28.

FIG. 2 illustrates the same substrate 20 and corresponding device 21 asFIG. 1, but with a conductive contact 25 in place on the uppermostsurface 26 of the epitaxial layer. Those familiar with devices such asMESFETS and HEMTs will immediately recognize that an exemplary devicemay also include a contact to the gate region 23 and another to thedrain region 24. As just noted, however, such contacts are not shown inFIGS. 1-11 for the purpose of simplifying the presentation of therelevant information. Accordingly, FIG. 2 simply shows the conductivecontact 25 to the source region 22 of the illustrated device. It will beunderstood that when the device is formed entirely in a single portionof silicon carbide, the entire portion can be considered the substrate20.

The conductive contact 25 of the invention herein is preferably formedof platinum. Conventional metals may be used for any of the contacts ina particular embodiment.

Alternatively, and without departing in any manner from the invention,the substrate can also include one or more epitaxial layers(“epilayers”) in which the device portion 21 is formed. In suchembodiments, the surface 26 would refer to the uppermost surface (in theorientation of FIGS. 1-4) of the epitaxial layer. Those familiar withthe growth of semiconductor materials, and particularly the growth ofsilicon carbide, will recognize that the use of a substrate and anepitaxial layer (or layers) even though made of the same material,provides a method of (in most circumstances) gaining an improved crystallattice in the epitaxial layers (epilayers) as compared to thesubstrate.

The fabrication of epilayers on a substrate is well understood in theart. The invention herein includes at least one and preferably aplurality of epitaxial layers made of semiconductor material other thansilicon carbide. Group III nitride epilayers on a silicon carbidesubstrate are especially advantageous. The Group III nitride epilayersprovide a wide band gap material in which a semiconductor device capableof operating at microwave frequencies may be formed. Epitaxial layers ofparticular interest include layers of gallium nitride for forming anHEMT or a MESFET therein. Other Group III nitride layers areparticularly suitable for forming HEMTs therein. These other epitaxiallayers include layers of InGaN, layers of InAlGaN, a combination ofepitaxial layers made of AlGaN and GaN, and a combination of layers madeof AlGaN, AlN, and GaN for forming HEMTs therein. The epilayers includea lower surface 29 in contact with the second surface 28 of a siliconcarbide substrate 20 and an uppermost surface 26 for forming devicecontacts thereon.

The Group III nitride semiconductor materials are especiallyadvantageous for forming the channel region of a MESFET or an HEMT. AnHEMT according to the invention herein includes a Group III nitridesemiconductor material forming a barrier layer on a Group III nitridesemiconductor channel layer as shown in HEMT 50 of FIG. 12. The barrierlayer 54 of the HEMT 50 has a bandgap energy that is greater than thebandgap energy of the channel layer 52 so that the junction of thebarrier layer 54 and the channel layer 52 yields a two dimensionalelectron gas. The two dimensional electron gas conducts a controllablecurrent from the source 58 to drain 60 in the HEMT. The HEMT may alsoinclude a spacer layer 56, formed of a Group III nitride such asaluminum nitride, between the channel 52 and barrier 54 layers tooptimize device performance.

Certain embodiments of HEMTs may have various configurations for thesource 58, gate 59 and drain 60 contacts. FIG. 12 illustrates oneembodiment in which the source 58 and drain 60 contacts may be platinumdeposits on the Group III nitride channel layer 52, and the gate contact59 is a platinum deposit on the Group III nitride barrier layer 54. Inan HEMT formed with a barrier layer 54 of AlGaN on a GaN channel layer52 on a silicon carbide substrate 51, the gate contact 59 may be aplatinum contact placed on the AlGaN layer because platinum exhibitsrectifying behavior on AlGaN. The source and drain contacts 58, 60 ofthis embodiment may then be deposits of platinum that extend all the wayto the GaN layer because platinum is ohmic on GaN.

Other materials and positions for the source, gate, and drain contactsare possible in a transistor, depending upon the application at hand.FIG. 13 illustrates another embodiment in which the source 78, gate 79,and drain 80 contacts are made of appropriate materials that are ohmicor rectifying as needed on the barrier layer 77 of an HEMT 70. FIG. 13,therefore, shows an HEMT 70 formed with an AlGaN barrier layer 77 on achannel layer 76 of GaN on a silicon carbide substrate 75. The source78, gate 79, and drain 80 contacts of FIG. 13 are made of materials thatgive the appropriate ohmic or rectifying current response on the AlGaNbarrier layer 77. The gate contact 79 may be formed of titanium,platinum, chromium, alloys of tungsten and titanium, or platinumsilicide and achieve a rectifying current response on the AlGaN barrierlayer 77. The source and drain contacts 78, 80 may be formed of alloysof titanium, aluminum, and nickel and achieve the desired ohmic responseon the AlGaN barrier layer 77. The invention herein, therefore, requiresonly that source and drain contacts be formed so that the source anddrain contact material exhibits ohmic behavior when placed on anepitaxial layer made of a semiconductor material other than siliconcarbide. Likewise, the gate contact must be formed of a contact materialthat exhibits rectifying behavior when placed on an epitaxial layer madeof a semiconductor material other than silicon carbide.

The placement of contacts on a silicon carbide based transistor requiresconsiderations other than simple conductivity. The contact must respondappropriately when a current is conducted across it in a controlledcircuit, as discussed above. The contact must also be conducive tostandard fabrication techniques that are compatible with the remainingportions of the device. The invention herein emphasizes theseconsiderations with the additional advantage of placing contacts on atransistor that are made of appropriate materials serving as electricalconduits and etch stops in the fabrication of conductive vias.Accordingly, FIG. 2 shows a conductive etch stop material, which may beindium-tin-oxide (“ITO”), or preferably platinum, in the form of acontact 25 placed at a predetermined position on the uppermost surface26 of the epitaxial layer 29. As shown in greater detail below, thecontact 25 has physical qualities that enable it to serve as an endpointof a conductive via through the device. By serving the dual purpose ofelectrical contact and etch stop, the contact 25 alleviates the need foran extra etch stop material being added to the manufacturing process.

FIG. 3 illustrates that in order to provide a high quality contact forthe devices utilizing an indium-tin-oxide contact 25, the contact 25 istypically further coated with a noble metal 30 which in preferredembodiments is typically gold. The noble metal 30 would not be necessaryfor devices utilizing a platinum contact as the etch stop.

At this point, one of the particular advantages of the invention can behighlighted: the use of conductive ITO, or platinum as the case may be,as the etch stop eliminates the need to add and remove another etch stopmaterial before and after the etch step respectively. Instead, the ITOor platinum is simply incorporated into the device or circuit before thevia is etched. Because the ITO or platinum etch stop does such doubleduty, fewer materials need be introduced into the process environment,and fewer process steps are required. As known those familiar withsemiconductor manufacturing techniques, processes using fewer steps andfewer materials, yet producing the desired structures, are generallyadvantageous. Furthermore, eliminating a foreign etch stop material thatwould otherwise have to be both added and then removed, is particularlyadvantageous.

FIG. 4 illustrates that in preferred embodiments, the device,particularly the uppermost epitaxial layer and the source 22, the gate23, and the drain 24 regions, are covered with a protective polymerlayer 31 which in preferred embodiments is a polyimide. The polyimidelayer 31 protects the device underneath, and provides a leveling effectfor the precursor for appropriate handling in the followingmanufacturing steps.

FIG. 5 illustrates that in a next step, the polymer-coated uppermostsurface 26 of the epitaxial layer 29 is mounted on a platen 32. Theplaten 32 is preferably formed of silicon carbide, in this case for itsmechanical and thermal properties rather than its electronic advantages.Typically, a mounting adhesive 33 is used to fix the polyimide coatedsurface 31 to the platen 32. The mounting adhesive can be anyappropriate material that will keep the polyimide-coated device andsubstrate fixed to the silicon carbide platen 32 during the subsequentprocessing steps while both withstanding those steps and avoiding anyinterference with them. Such adhesives are generally well known in theart and will not be described in detail herein.

FIG. 6 illustrates that in the next step of the preferred method, thesemiconductor substrate 20 is ground and polished until it issubstantially transparent. The grinding and polishing are carried outfor at least three reasons. First, because etching through siliconcarbide is difficult under any circumstances, minimizing the thicknessof the silicon carbide substrate 20 helps facilitate the overall etchingprocess. Second, by grinding and polishing the substrate 20 until it issubstantially transparent, an appropriate optical path can be definedfrom the first surface 27 of the substrate 20 to the metal contact 25 sothat appropriate positions for the vias can be aligned and etched to thecontact 25 in the desired manner, as described herein with respect tothe remaining drawings. Third, the resulting thinner substrate (i.e.,less mass) offers thermal advantages for the resulting device or MMIC.

According to the present invention, when etching a via the front sideetch stop pads should be conductive so that the multiple layers formingthe integrated circuit will be connected, thereby allowing the circuitto perform its desired function. Further, the etch mask on the backsideof the sample is preferably transparent to permit optical alignment(including visual alignment) of the sample with the front side etchstop.

FIG. 7 illustrates that in the next steps of the preferred method of theinvention, the first surface 27 of the substrate 20 is coated with alayer 34 of indium-tin-oxide (ITO). The ITO is selected and incorporatedfor at least two reasons. First, the ITO layer 34 can be formed to betransparent, so that the method of the invention can incorporate typicalmicrolithography and masking techniques used in semiconductor design andmanufacture. Second, and as discussed in the Experimental section tofollow herein, the ITO provides a good masking material for SiC becausethe desired etchants discriminate as between SiC and ITO in a mannerthat is both desired and necessary during the etching process.

In another embodiment, the layer 34 on the substrate's first surface 27can comprise magnesium oxide (MgO), which offers the sameadvantages—selectivity and transparency—as ITO. As known to thosefamiliar with MgO, it can be produced in a very dense form with a veryhigh melting point (2800° C.).

The ITO layer 34 is then coated with an appropriate photoresist layer35. Photoresist compounds are generally well known in the art and willnot be otherwise discussed in detail herein, other than to note that anappropriate photoresist material should be compatible with deposition onthe ITO layer 34 and should provide an appropriate level of definitionwhen exposed and developed. The exposed photoresist layer 35 provides aguide for etching the ITO layer 34, the substrate 20, and the epitaxiallayer 29.

FIG. 8 illustrates the precursor structure after the photoresist 35 hasbeen masked, exposed, and developed, steps which can otherwise becarried out in conventional fashion provided they are consistent withthe remainder of the process and materials. Opening the photoresistforms a defined opening 36 in the photoresist layer 35 through which theITO layer 34 can be appropriately opened and then, as illustrated inFIG. 9, the appropriate via 37 can be formed.

As FIG. 9 illustrates, the invention herein is a method of fabricating asemiconductor device with a via that is formed by etching steps toprovide a conductive path from the first surface 27 of the substrate tothe source 22, gate 23, or drain 24 regions of the device. Theconductive path eliminates the need for wire bonding when thesemiconductor device is incorporated into an integrated circuit becausethe contacts are electrically accessible through the via. Thesemiconductor device with the conductive via is fabricated by forming atleast one epitaxial layer 29 of a wide bandgap semiconductor materialother than silicon carbide on a silicon carbide substrate 20. Thesubstrate preferably has first and second surfaces on opposite sides,and the at least one epitaxial layer 29 comprises a lower surface 38 incontact with the second surface 28 of the silicon carbide substrate 20and an uppermost surface 26 for fabricating semiconductor devicecomponents thereon. Source 22, gate 23, and drain 24 regions of thedevice are defined by placing respective contacts at predeterminedpositions on the uppermost surface of the epitaxial layer 29 or layers.

A mask is then applied to the first surface 27 of the silicon carbidesubstrate 20. The mask is aligned on the photoresist layer 35 to definepoints that will be opened by developing the photoresist layer usingconventional means. Masking the first surface of the silicon carbidesubstrate defines predetermined locations for a plurality of conductivevias opposite from and aligned with the predetermined positions for thecontacts connected to the source 22, gate 23, and drain 24 regions.

Next, a plurality of conductive vias are etched through the siliconcarbide substrate 20 and through the epitaxial layer, or epitaxiallayers 29, to provide conductive paths from the first surface of thesilicon carbide substrate 27 to each respective contact on the source22, gate 23, or drain 24 region.

The inventors herein have developed a series of steps to convenientlyand accurately etch all of the layers necessary in fabricatingsemiconductor devices on a silicon carbide substrate.

In certain embodiments of the invention, the transparent ITO layer 34 isetched within the region defined by the mask with a first reactive ionetch. This first reactive ion etch may be carried out using borontrifluoride as the etchant or etched in chorine chemistry.

In a more preferred embodiment, openings in the ITO layer 34 areaccomplished by using a traditional lift-off technique. In lift-off, thebare substrate 20 onto which the ITO 34 will be patterned is coveredwith photoresist 35. In this embodiment, therefore, the order of layers34 and 35 are reversed from that shown in FIGS. 7-9 and are shown indetail in FIGS. 15-17. Traditional patterning of the photoresist 35using ultraviolet irradiation through a patterned opaque screen and awet chemical developer is used to expose only the regions of thesubstrate 20 surface that will become the etch mask. Typically, circularor oval islands of photoresist remain as the regions which willeventually become the etched via holes in the substrate 20.Subsequently, an ITO film 34 is deposited onto the patterned substrate.The ITO-covered, patterned wafer is then immersed into a solvent thatdissolves the photoresist islands, and the ITO 34 resting on top of thephotoresist 35 is also removed. Typically, acetone can be used todissolve the photoresist 35. The result is a thin film of ITO mask onthe substrate with predetermined openings that expose the substrate toan etchant. In this manner, the openings in the ITO guide the etchingprocess for forming vias in the semiconductor layers.

The silicon carbide substrate 20 is etched next with an etchant thatremoves silicon carbide but does not remove the material other thansilicon carbide forming the epitaxial layer 29 on the second surface 28of the substrate 20. Etching of the silicon carbide, therefore, stops atan epitaxial layer 29 on the substrate 20. In one embodiment, the stepof etching the silicon carbide substrate includes etching within theregion defined by the mask with an inductively coupled plasma. Theinductively coupled plasma etching of the silicon carbide substrate maybe carried out in fluorine chemistry using sulfur hexafluoride (SF₆) asthe etchant.

Third, the epitaxial layer 29, or layers, are etched with an etchantthat removes the material other than silicon carbide, forming theepitaxial layer 29, but does not remove the silicon carbide or thematerials used to form source, gate, or drain contacts, so that etchingthe epitaxial layer 29 stops at each respective source, gate, and drainregion. The step of etching the epitaxial layer, or layers, preferablyincludes etching within the region defined by the mask with a secondreactive ion etch. In one embodiment, chlorine chemistry is used to etchthe epitaxial layers in the reactive ion etch.

In the preferred embodiment, upon completing the etching process, theITO layer is effectively removed using solutions of hydrochloric acidand de-ionized water having an acid content in the range of about 7% toabout 50% hydrochloric acid. Typical embodiments use a 1:1 ratio ofhydrochloric acid and de-ionized water. The method herein could alsoinclude grinding off the transparent ITO layer 34 to ensure metaladhesion to the backside of the substrate when installing the overalldevice in a circuit. The first surface 27 of the silicon carbidesubstrate 20 is then subject to further inductively coupled plasmaetching in a fluorine chemistry, after grinding off the transparentlayer, to repair any damage to the substrate caused by grinding.

The steps of the etching process yield precursor products at certainpoints in the method described herein. The invention, therefore,includes circuit precursors at different levels of fabrication andetching. For example, one circuit precursor includes a polished siliconcarbide substrate 20 having respective first and second surfaces 27 and28, at least one Group III nitride epitaxial layer 29 on the secondsurface 28 of a silicon carbide substrate 20, an uppermost surface 38 ofthe epitaxial layer 29 for forming electrical contacts thereon, asemiconductor device 21 in the epitaxial layer 29, respective contacts,one of which is shown by example 25 on the uppermost surface 26 fordefining source 22, gate 23, and drain 24 regions for a semiconductordevice 21 in the epitaxial layer 29, a polymer coating covering theentire epitaxial layer 29 including the contacts, and a transparentlayer 34 selected from the group consisting of indium-tin-oxide andmagnesium oxide on the first surface of the polished transparentsubstrate.

A circuit precursor may include at least one via extending from thelayer of photoresist 35 on the silicon carbide substrate 20, through thesilicon carbide substrate, to the second surface 28 of the substrateunder the epitaxial layers. Alternatively, a circuit precursor accordingto this invention may comprise at least one via extending through thesilicon carbide substrate 20 and through the at least one epitaxiallayer 29, from the first surface of the substrate all the way to thecontacts, shown in the figures by example contact 25.

In a particularly advantageous step, the method of the inventionincorporates the original conductive contact 25 as the etch stop. In onepreferred embodiment, the conductive contact 25 is made of platinum foreach respective source, gate and drain, which may serve as a useful etchstop in etching the epitaxial layers. The reactive ion etch utilizingchlorine chemistry, described above for etching the epitaxial layers,does not etch platinum. The platinum contact of the semiconductordevice, therefore, serves as the etch stop. In this manner, the methodof the invention avoids using additional steps—and (often just asimportantly) additional materials—to add and then remove a separate etchstop. Again, it is to be understood that although the Figures illustrateonly one via, such is for the purpose of clarifying the illustrations,and the invention is advantageously used for opening multiple vias.

FIG. 10 illustrates that in preferred embodiments, the via is metallizedto provide a conductive path from the first surface of the substrate toeach respective source, gate, and drain contact. In a preferredembodiment, the via is first sputter-coated with three layers of metal:titanium, platinum, and gold (“Ti/Pt/Au”), in that order, along thefloor and walls of the etched trench. This coating is designated as 40in FIG. 10. The coating 40 is then electroplated with a noble metal 41,preferably gold, to form the complete contact from the first surface 27of the substrate 20 through the substrate to the lower surface of theepitaxial layer 26, and more particularly to the contact 25 which ispart of the device portion 21. In preferred embodiments, the photoresistand indium-tin-oxide layer 34 and the photoresist layer 35 are bothremoved prior to the step of sputter coating with the Ti/Pt/Au coating40 and the electroplating with the gold 41. The device precursor is thenremoved from the platen 32 and the protective polyimide layer 31 isstripped to produce the resulting device illustrated in FIG. 11.

FIG. 14 is an SEM micrograph of a 100 micron diameter via hole etched ina 4 mil (1000 mil=1 inch) silicon carbide wafer according to the presentinvention. Although FIGS. 1-13 are drawings and FIG. 14 is a photograph,by way of comparison, the top surface illustrated in FIG. 14 correspondsto the first surface 27 in the drawings. As understood by those of skillin this art, the ability to put vias of this diameter in silicon carbidesubstrates of this thickness, makes broadband, high frequency MMICSpossible in desirable silicon carbide substrates.

The invention is a method of etching vias, typically (although notnecessarily limited to) about 25 to 200 microns in diameter through asilicon carbide substrate, 100 to 200 microns thick. The inventive etchprocess yields an etch rate of between about 0.5 and 0.8 microns perminute (μ/min.), a selectivity to the etch mask of 150, and anisotropyof 90 to 99%.

The central issue of etching vias in silicon carbide is finding an etchprocess which etches silicon carbide—a material of high stability andhigh bond strength—a reasonable rate (e.g., 0.5 μ/min) while minimizingthe erosion of the etch mask.

The invention satisfies these diametrically opposing requirements by thechoice of mask material, plasma parameters, and chemistry.

In the invention, indium-tin-oxide (“ITO”) is the preferred etch maskfor vias in silicon carbide for several reasons. First, ITO is stableand does not etch in the fluorine chemistry that is most efficient andpreferred for etching silicon carbide. Second, unlike other hard metalmasks, ITO does not sputter at the ion energies that are sufficient tobreak silicon carbide bonds, and thus can etch silicon carbide. Third,ITO is also transparent, which allows the etch mask to be alignedthrough the wafer to the edge pads. Fourth, ITO may also be used for theetch stop, because it is conductive and a can serve as the material onwhich the etch stops.

As noted above, one of the best etch masking materials for vias etchesin silicon carbide is Indium-Tin-Oxide (ITO). The ITO etch mask ispatterned as follows. The wafer is first blanket coated with ITO, thenwith photoresist. The photoresist is exposed through a mask with UVlight and the exposed areas harden, thus transferring the mask patternonto the photoresist. The photoresist acts as a mask in the subsequentetch of the ITO in the chlorine chemistry, thus transferring the patternof the photomask onto the ITO. The ITO then acts a mask in thesubsequent etch of the silicon carbide vias in fluorine chemistry.

An inductively coupled plasma (ICP) is used in the invention to generatea high density SF₆ plasma to etch vias in silicon carbide for severalreasons. First achieving a high etch rate in the silicon carbide whileminimizing the erosion of the etch mask requires a high density and lowenergy plasma. The use of ICP is critical for this purpose because itallows a high density plasma to be generated, and it permits theindependent control of plasma density by adjusting the coil power andion energy by adjusting the chuck power. A high coil power (600-1500 Wwith about 800 W preferred) is selected to maximize plasma density.

An important point of the invention is the use of a chuck power in theICP system that maximizes the etch rate of the silicon carbide whilekeeping the erosion of the ITO or MgO etch mask minimal. As the chuckpower is increased in an ICP system, the etch rate of the siliconcarbide increases; this increase, however, is much more drastic at lowchuck powers than at high chuck powers. As the chuck power is increasedthe erosion rate of the ITO or MgO etch mask is minimal and does notincrease initially; at higher chuck powers, however, it increasesrapidly. Thus, the invention incorporates the recognition that a chuckpower can be selected that on one hand maximizes SiC etch rate and onthe other hand maximizes the difference in the etch rates of SiC and ITOetch mask. In preferred embodiments, this chuck power level isdetermined to be between about 1 to 2 watts of power per squarecentimeter (Wcm⁻²) presently being preferred.

In preferred embodiments, the invention incorporates sulfur hexafluoride(SF₆) chemistry to etch vias in silicon carbide, because it is deemed tobe the most efficient of the fluoride chemistries for such purpose. Theinvention does not use any gas additive, as it tends to slow down theetch rate of the silicon carbide and speeds up the mask erosion bysputtering. The invention uses SF₆ at a pressure of 1 to 5 milliTorr(mT), with about 3 mT being preferred. Similarly, the gas is supplied ata rate of between about 5 and 100 standard cubic centimeters per minute(sccm), with about 10 sccm being preferred.

In further investigations employing the use of SF₆, it was determinedthat SF₆ yielded a higher SiC to ITO mask selectivity (approximately150:1) than NF₃ or CF₄ (approximately 70:1). As discussed above,conventional methods of etching SiC included the use of NF₃ or SF₆diluted with Ar and CF₄/O₂. Upon investigation, however, the addition ofAr or O₂ to SF₆ or NF₃ reduced the etch rate in SiC and increased maskerosion due to the lower percentage of fluorine and greater ionbombardment. Thus, the use of SF₆ without additional gases is preferablein achieving the increased etch rate and high selectivity with respectto an ITO mask of the present invention.

The etch rate of a via can be increased by raising the temperature ofthe substrate or thin film applied thereon. Elevations in temperaturemay be achieved by halting the flow of helium to the backside of thesample, which serves to cool the sample. Otherwise, the backsidepressure is maintained at between about 1 and 10 torr. The chemicalreactions affecting the etch rate (e.g., breaking of molecular bonds)can also be increased by increasing the gas flow and chamber pressure.

An increase in the chemical reactions affecting the via etch results inan increased lateral etch and, thus, sidewall slope of the via. Theincrease in the chemical reactions also leads to an increase in the etchrate and erosion of the ITO mask. Further, spiking and surfaceimperfections may result from the enhanced chemical reactions.

As exemplified by the referenced cited in the Background, the equipmentand processes used to generate inductively coupled plasmas are generallywell-known and well-understood in this art. Accordingly, the techniquesdescribed herein can be carried out by those of ordinary skill in thisart, and without undue experimentation.

EXPERIMENTAL

In preferred embodiments, the present invention also comprises a methodof dry etching a via in SiC using sulfur hexafluoride chemistry in aninductively coupled plasma (ICP). In a particular embodiment of theinvention, the dry etching was conducted in a Model 790 ICP systemmanufactured by Plasma-Therm Incorporated.

In this system, the wafer is placed on a He-cooled chuck in the processchamber, the wafer is clamped and subsequently the process chamber isevacuated to 10⁻⁵ Torr with a turbo and mechanical pump. Five to twentycubic centimeter per minute electronic grade sulfur hexafluoride isinjected into the process chamber and a butterfly valve above the turbopump is throttled to achieve the operating pressure of 2 to 5 mT.Subsequently, power is applied to generate a plasma. This system usestwo radio frequency (RF) power sources. One is connected to the chuckand is used to control energies of ions reaching the substrate and isset between 1 to 2 W/cm². The second RF source is connected to a threeturn inductor coil wrapped around the ceramic process chamber. Thesecond RF source provides the main plasma generating power, controlsplasma densities and is set between 800 and 1200 W.

Prior to etching the via, the SiC substrate is coated with ITO, thenpatterned with photoresist using standard photolithography. The ITO isthen dry etched in chlorine chemistry in which the photoresist is theetch mask. Vias are subsequently etched in SiC in fluorine chemistry inwhich the ITO is the etch mask. The via dry etch process is highlyanisotropic, with SiC etch rate of 0.5 to 0.8 micron/min, andselectivity to the etch mask of 100 to 150.

In the specification, there have been disclosed typical embodiments ofthe invention, and, although specific terms have been employed, theyhave been used in a generic and descriptive sense only and not forpurposes of limitation, the scope of the invention being set forth inthe following claims.

1. A semiconductor device comprising: a silicon carbide substrate; and aGroup III-V semiconductor layer on said silicon carbide substrate,wherein the semiconductor device defines at least one via through saidsilicon carbide substrate and said Group III-V semiconductor layer.
 2. Asemiconductor device according to claim 1, further comprising aconductive coating within the at least one via.
 3. A semiconductordevice according to claim 1, further comprising a conductive fillingwithin the at least one via.
 4. A semiconductor device according toclaim 1, wherein the at least one via extends through the entirety ofthe silicon carbide substrate and the Group III-V semiconductor layer.5. A semiconductor device according to claim 1, further comprising atleast one contact on said Group III-V semiconductor layer, wherein theat least one via extends from the silicon carbide substrate to said atleast one contact.
 6. A semiconductor device according to claim 1,wherein said silicon carbide substrate is substantially transparent. 7.A semiconductor device according to claim 1, further comprising aplurality of conductive contacts on said Group III-V semiconductorlayer, wherein the semiconductor device defines respective viasextending entirely through the silicon carbide substrate and said GroupIII-V semiconductor layer such that each via terminates at acorresponding one of the plurality of conductive contacts.
 8. Asemiconductor device according to claim 1, wherein said Group III-Vsemiconductor layer is a Group III-V epilayer.
 9. A semiconductor deviceaccording to claim 1, further comprising a polymer coating covering theentire Group III-V semiconductor layer.
 10. A semiconductor deviceaccording to claim 1 further comprising a transparent layer selectedfrom a group consisting of indium-tin-oxide and magnesium oxide on asecond surface of said silicon carbide substrate opposite said GroupIII-V semiconductor layer.
 11. A semiconductor device according to claim10, further comprising a layer of photoresist on said transparent layer.12. A method of fabricating a device on a silicon carbide substratehaving first and second surfaces on opposite sides of the siliconcarbide substrate, the method comprising: forming a Group III nitridelayer on the first surface of the silicon carbide substrate; placing aconductive etch stop material at a predetermined position on the GroupIII nitride layer; and etching a via through the silicon carbidesubstrate and the Group III nitride layer to the conductive etch stopmaterial.
 13. A method of fabricating a device on a silicon carbidesubstrate according to claim 12, wherein prior to etching the via, themethod further comprises a step of polishing the second surface of thesilicon carbide substrate until the silicon carbide substrate issubstantially transparent.
 14. A method of fabricating a device on asilicon carbide substrate according to claim 13, wherein, prior toetching the via, the method further comprises the steps of: placing atransparent layer selected from a group consisting of indium-tin-oxideand magnesium oxide on the polished silicon carbide substrate; placing aphotoresist on the transparent layer of indium-tin-oxide; and opticallyaligning a mask on the photoresist that develops the photoresist to openat a point optically aligned with the conductive etch stop material onan opposite surface of the Group III nitride layer.
 15. A method offabricating a device on a silicon carbide substrate according to claim14 further comprising a step of metallizing the via to form a conductiveconnection from the silicon carbide substrate to the conductive etchstop material.